We have developed a new scheme of process control combining a CD metrology system and an exposure tool. A new
model based on Neural Networks has been created in KLA-Tencor's "KT Analyzer" which calculates the dose and
focus errors simultaneously from CD parameters, such as mid CD and height information, measured by a scatterometry
(OCD) measurement tool. The accuracy of this new model was confirmed by experiment. Nikon's "CDU master" then
calculated the control parameters for dose and focus per each field from the dose and focus error data of a reference
wafer provided by KT Analyzer. Using the corrected parameters for dose and focus from CDU master, we exposed
wafers on an NSR-S610C (ArF immersion scanner), and measured the CDU on a KLA SCD100 (OCD tool). As a result,
we confirmed that CDU in the entire wafer can be improved more than 60% (from 3.36nm (3σ) to 1.28nm (3σ)).
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