Optimal thickness of phase shift mask considering phase and reflectance in high NA EUV contact-hole pattern

Jang-Gun Park; Min-Woo Kim; Ji-Won Kang; Hee-Chang Ko; Jun-Hyung Lee; Won-Young Choi; Hye-Keun Oh

doi:10.1117/12.2613984

26 May 2022 Optimal thickness of phase shift mask considering phase and reflectance in high NA EUV contact-hole pattern

Jang-Gun Park, Min-Woo Kim, Ji-Won Kang, Hee-Chang Ko, Jun-Hyung Lee, Won-Young Choi, Hye-Keun Oh

Proceedings Volume 12051, Optical and EUV Nanolithography XXXV; 120510O (2022) https://doi.org/10.1117/12.2613984
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Conference Poster

Abstract

For finer linewidth patterning, 0.55 numerical aperture (NA) should be used instead of the existing 0.33 NA. In 0.55 NA extreme ultraviolet lithography (EUVL), to alleviate the mask 3D effect and stochastic noise, which is stronger, it is necessary to develop an optimal phase shift mask (PSM) and multilayer mask for high NA. Mask structure is used PSM with composed of Ru-alloy/TaBO and multilayer composed of ruthenium (Ru)/silicon (Si), which is expected to be effective in mitigating mask 3D effect and improving imaging performance. The absorber reflectance was checked which is changed by variables such as pattern existence, target CD, and pitch ratio. In addition, by examining the relationship between the change in absorber reflectance and normalized image log slope (NILS), it was determined whether the mask structure for high NA was changed by the target pattern changes.

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Jang-Gun Park, Min-Woo Kim, Ji-Won Kang, Hee-Chang Ko, Jun-Hyung Lee, Won-Young Choi, and Hye-Keun Oh "Optimal thickness of phase shift mask considering phase and reflectance in high NA EUV contact-hole pattern", Proc. SPIE 12051, Optical and EUV Nanolithography XXXV, 120510O (26 May 2022); https://doi.org/10.1117/12.2613984

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