Dr. Vladimir A. Ukraintsev Profile

Dr. Vladimir A. Ukraintsev

Deceased at Nanometrology International Inc

SPIE Involvement:

Editor | Author | Instructor

Area of Expertise:

critical dimension metrology , reference metrology , scanning probe microscopy , physical characterization , nanoprobing , surface science

Websites:

Company Website

Vladimir Ukraintsev has PhD in Solid State Physics. Before joining Qorvo, Inc. Vladimir founded Nanometrology International, Inc., directed Technical Marketing at Veeco Instruments and developed metrology solutions for 6 technologies at Texas Instruments. Vladimir published over 85 articles focusing on development of metrology and characterization solutions for industrial applications.

Proceedings Article | 13 March 2018 Presentation + Paper

CD-SEM real time bias correction using reference metrology based modeling

V. Ukraintsev, W. Banke, G. Zagorodnev, C. Archie, N. Rana, V. Pavlovsky, V. Smirnov, I. Briginas, A. Katnani, A. Vaid

Proceedings Volume 10585, 105850W (2018) https://doi.org/10.1117/12.2297065

KEYWORDS: Scanning electron microscopy, Metrology, Data modeling, Optical proximity correction, Critical dimension metrology, Photoresist materials, Scanners, Process modeling, 3D modeling, Optical lithography

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SPIE Journal Paper | 4 June 2013

Distributed force probe bending model of critical dimension atomic force microscopy bias

Vladimir Ukraintsev, Ndubuisi Orji, Theodore Vorburger, Ronald Dixson, Joseph Fu, Richard Silver

JM3, Vol. 12, Issue 02, 023009, (June 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.023009

KEYWORDS: Atomic force microscopy, Data modeling, 3D modeling, Numerical analysis, Error analysis, Metrology, Statistical modeling, Carbon nanotubes, Solids, Standards development

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Proceedings Article | 3 April 2012 Paper

On CD-AFM bias related to probe bending

V. Ukraintsev, N. Orji, T. Vorburger, R. Dixson, J. Fu, R. Silver

Proceedings Volume 8324, 83240V (2012) https://doi.org/10.1117/12.916737

KEYWORDS: Data modeling, 3D modeling, Numerical analysis, Metrology, Atomic force microscopy, Statistical analysis, Standards development, Semiconductors, 3D metrology, Statistical modeling

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SPIE Journal Paper | 27 February 2012

Review of reference metrology for nanotechnology: significance, challenges, and solutions

Vladimir Ukraintsev, G. William Banke

JM3, Vol. 11, Issue 1, 011010, (February 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.1.011010

KEYWORDS: Metrology, Atomic force microscopy, Nanotechnology, Critical dimension metrology, Transmission electron microscopy, Scanning electron microscopy, Semiconductors, Silicon, Coating, Silicon carbide

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Proceedings Article | 29 March 2011 Paper

Challenges of SEM-based critical dimension metrology of interconnect

Vladimir Ukraintsev, Scott Jessen, Brian Mikeska, Chris Sallee, Vitali Khvatkov

Proceedings Volume 7971, 797109 (2011) https://doi.org/10.1117/12.882183

KEYWORDS: Critical dimension metrology, Metrology, Scanning electron microscopy, Atomic force microscopy, Photoresist materials, Process control, Cadmium, Semiconducting wafers, Calibration, Optical proximity correction

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Semiconductor technology is advancing below 50 nm critical dimensions bringing unprecedented challenges to process engineering, control and metrology. Traditionally, interconnect metrology is put behind high-priority gate metrology; however, considering metrology, process and yield control challenges this decision is not always justified. Optical scatterometry is working its way to interconnect manufacturing process control, but scanning electron microscopy (SEM) remains the number one critical dimension (CD) metrology for interconnect process engineering and optical proximity correction (OPC) modeling. Recently, several publications have described secondary electron (SE) trapping within narrow high-aspect ratio interconnect structures. In these papers, pre-dosing of the sample helped to extract SE from the bottom of the hole and measure its diameter. Based on current understanding of the phenomenon, one should expect that high-aspect ratio interconnect structures (holes and trenches) with critical dimensions below 100 nm may show signs of SE trapping of various degree. As a result, there may be an uncontrolled effect on SE waveform and, therefore, bias of CDSEM measurement. CD atomic force microscopy (AFM) was employed in this work as a reference metrology for evaluation of uncertainty of trench and hole measurements by CDSEM. As the data indicates, CDSEM bias shows a strong dependence on pitch of periodic interconnect structure starting from drawn CD of 50 nm. CDSEM bias variation for the evaluated set of samples is about 19 nm. A typical OPC sample consists of both photoresist and etched interlayer materials. As the AFM data for photoresist material indicates, the hole diameter changes quite significantly with depth and the hole profile varies from one OPC structure to another. Abe et al. [1] have used a clever way to correlate physical bottom diameter of holes with CDSEM measurements and demonstrated that for their process and dimensions the SEM "top" diameter and physical bottom diameter correlate well. Unfortunately, this conclusion can't be generalized and measurement uncertainty of CDSEM must be evaluated on an individual technology/process basis. A more general approach to improve CDSEM accuracy is necessary which is based upon SI-traceable CDSEM bias measurements, modeling and correction.

Proceedings Article | 24 August 2010 Paper

Reference metrology for nanotechnology: significance, challenges and solutions

Vladimir Ukraintsev, Bill Banke

Proceedings Volume 7767, 77670C (2010) https://doi.org/10.1117/12.860666

KEYWORDS: Metrology, Atomic force microscopy, Critical dimension metrology, Transmission electron microscopy, Semiconductors, Scanning electron microscopy, Nanotechnology, Coating, Silicon, Silicon carbide

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Proceedings Article | 2 April 2010 Paper

SI-traceable calibration of line-width roughness of 25nm NanoCD standard

V. Ukraintsev, M. Helvey, Y. Guan, B. Mikeska

Proceedings Volume 7638, 76383U (2010) https://doi.org/10.1117/12.858774

KEYWORDS: Line width roughness, Calibration, Standards development, 3D imaging standards, Very large scale integration, Atomic force microscopy, Silicon, Manufacturing, Lithium, Lab on a chip

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Proceedings Article | 2 April 2010 Paper

Dimensional metrology with sub-nanometer uncertainty: unique role of AFM as the reference

Vladimir Ukraintsev, Johann Foucher

Proceedings Volume 7638, 76381C (2010) https://doi.org/10.1117/12.846870

KEYWORDS: Metrology, Critical dimension metrology, Atomic force microscopy, Process control, Scanning electron microscopy, Statistical analysis, Calibration, Dimensional metrology, Semiconductors, Control systems

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Proceedings Article | 2 April 2010 Paper

From pin-point design based critical dimension metrology toward comprehensive evaluation of IC patterning integrity

Chris Sallee, Wayne Clark, Bo Jou Lu, Vladimir Ukraintsev, Vitali Khvatkov

Proceedings Volume 7638, 76382N (2010) https://doi.org/10.1117/12.848619

KEYWORDS: Image processing, Semiconducting wafers, Scanning electron microscopy, Imaging arrays, Feature extraction, Manufacturing, Optical lithography, Critical dimension metrology, Design for manufacturability, Printing

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Proceedings Article | 24 March 2009 Paper

Applications of AFM in semiconductor R&D and manufacturing at 45 nm technology node and beyond

Moon-Keun Lee, Minjung Shin, Tianming Bao, Chul-Gi Song, Dean Dawson, Dong-Chul Ihm, Vladimir Ukraintsev

Proceedings Volume 7272, 72722R (2009) https://doi.org/10.1117/12.813389

KEYWORDS: Metrology, Atomic force microscopy, Critical dimension metrology, Silicon, Transmission electron microscopy, Transistors, Photomasks, Process control, Image processing, Optical filters

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Proceedings Article | 23 March 2009 Paper

Role of CDAFM in achieving accurate OPC modeling

Vladimir Ukraintsev

Proceedings Volume 7272, 727205 (2009) https://doi.org/10.1117/12.815240

KEYWORDS: Optical proximity correction, Resolution enhancement technologies, Metrology, Data modeling, Critical dimension metrology, Optical lithography, Atomic force microscopy, Etching, 3D modeling, Scanning electron microscopy

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Proceedings Article | 16 April 2008 Paper

Impact of sampling on uncertainty: semiconductor dimensional metrology applications

Benjamin Bunday, Bart Rijpers, Bill Banke, Chas Archie, Ingrid Peterson, Vladimir Ukraintsev, Thomas Hingst, Masafumi Asano

Proceedings Volume 6922, 69220X (2008) https://doi.org/10.1117/12.772993

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Metrology, Process control, Statistical analysis, Calibration, Scatterometry, Multiphoton fluorescence microscopy, Scanning electron microscopy, Etching

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Proceedings Article | 5 April 2007 Paper

Characterization of bending CD errors induced by resist trimming in 65 nm node and beyond

Yiming Gu, James Friedmann, Vladimir Ukraintsev, Gary Zhang, Thomas Wolf, Tom Lii, Ricky Jackson

Proceedings Volume 6518, 651826 (2007) https://doi.org/10.1117/12.714479

KEYWORDS: Critical dimension metrology, Cadmium, Semiconducting wafers, Optical proximity correction, Photoresist processing, Plasma, Silicon, Line edge roughness, Etching, Transistors

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Proceedings Article | 5 April 2007 Paper

Realizing "value-added" metrology

Benjamin Bunday, Pete Lipscomb, John Allgair, Dilip Patel, Mark Caldwell, Eric Solecky, Chas Archie, Jennifer Morningstar, Bryan Rice, Bhanwar Singh, Jason Cain, Iraj Emami, Bill Banke, Alfredo Herrera, Vladamir Ukraintsev, Jerry Schlessinger, Jeff Ritchison

Proceedings Volume 6518, 65181K (2007) https://doi.org/10.1117/12.714216

KEYWORDS: Metrology, Overlay metrology, Inspection, Semiconducting wafers, Process control, Yield improvement, Critical dimension metrology, Optical proximity correction, Etching, Lithography

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The conventional premise that metrology is a "non-value-added necessary evil" is a misleading and dangerous assertion, which must be viewed as obsolete thinking. Many metrology applications are key enablers to traditionally labeled "value-added" processing steps in lithography and etch, such that they can be considered integral parts of the processes. Various key trends in modern, state-of-the-art processing such as optical proximity correction (OPC), design for manufacturability (DFM), and advanced process control (APC) are based, at their hearts, on the assumption of fine-tuned metrology, in terms of uncertainty and accuracy. These trends are vehicles where metrology thus has large opportunities to create value through the engineering of tight and targetable process distributions. Such distributions make possible predictability in speed-sorts and in other parameters, which results in high-end product. Additionally, significant reliance has also been placed on defect metrology to predict, improve, and reduce yield variability. The necessary quality metrology is strongly influenced by not only the choice of equipment, but also the quality application of these tools in a production environment. The ultimate value added by metrology is a result of quality tools run by a quality metrology team using quality practices. This paper will explore the relationships among present and future trends and challenges in metrology, including equipment, key applications, and metrology deployment in the manufacturing flow. Of key importance are metrology personnel, with their expertise, practices, and metrics in achieving and maintaining the required level of metrology performance, including where precision, matching, and accuracy fit into these considerations. The value of metrology will be demonstrated to have shifted to "key enabler of large revenues," debunking the out-of-date premise that metrology is "non-value-added." Examples used will be from critical dimension (CD) metrology, overlay, films, and defect metrology.

Proceedings Article | 5 April 2007 Paper

Transition from precise to accurate critical dimension metrology

Vladimir Ukraintsev, Margaret Tsai, Tom Lii, Ricky Jackson

Proceedings Volume 6518, 65181H (2007) https://doi.org/10.1117/12.714528

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Atomic force microscopy, Metrology, Calibration, Standards development, Cadmium, Semiconducting wafers, Etching, Time metrology

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A new measurement system analysis (MSA) methodology has been developed at Texas Instruments (TI) to evaluate the status of the 65 nm technology critical dimension (CD) metrology and its readiness for production. Elements of the methodology were used in a previously reported scatterometry evaluation [1]. At every critical process level the precision, bias, linearity and total measurement uncertainty (TMU) were evaluated for metrology fleet over extended periods of time, and with the technology representative set of samples. The samples with variations that fully covered and often exceeded process space were pre-calibrated by CD atomic force microscope (AFM). CD AFM measurement precision was determined for every analyzed process level based on repeated measurements conducted over several days. The National Institute of Standards and Technologies (NIST) traceable standards were used to verify CD AFM line CD and scale calibrations. Therefore, for the first time the NIST traceability has been established for CD metrology at every critical process level for the entire technology. The data indicates an overall healthy status of the 65 nm CD metrology. Sub-nanometer accuracy has been established for gate CD metrology. The thorough CD metrology characterization and specifically absolute CD calibration were instrumental in seamless technology transfer from 200 mm to 300 mm fabs. The qualification of CD metrology also revealed several problems. Most of these are well-known from previous studies and should soon be addressed. CD scanning electron microscopy (SEM) has a systematic problem with bias of CD measurements. The problem is common for several front-end and back-end of line process levels. For most process levels, TMU of CD SEM is noticeably affected by sample modification inflicted by electron irradiation (shrinkage, charging, buildups, etc.). This causes problems, especially in the case of fleet TMU evaluation. An improved data collection methodology should be devised to minimize the impact of sample modification on fleet TMU measurements. The reported progress in semiconductor industrial CD metrology became possible after a recent breakthrough in line CD standard technology [2,3], recognition of CD AFM as an instrument for CD traceability [4,5] and development of the concept and mathematical tools for TMU analysis [6,7].

Proceedings Article | 24 March 2006 Paper

A comprehensive test of optical scatterometry readiness for 65-nm technology production

Vladimir Ukraintsev

Proceedings Volume 6152, 61521G (2006) https://doi.org/10.1117/12.657649

KEYWORDS: Atomic force microscopy, Critical dimension metrology, Etching, Data modeling, Metrology, Semiconducting wafers, Scanning electron microscopy, Silicon, Tolerancing, Calibration

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Measurement bias is a central concept of critical dimension (CD) metrology. Bias is a complex function of sample, tool and time. Bias variation defines the total measurement uncertainty (TMU). TMU is a measure of metrology quality. Precision (or bias variation with time) is only a part of TMU. Often tool-to-tool and sample-to-sample components of bias variation exceed precision. To measure sample-to-sample bias variation, knowledge of the reference CD value for the samples is required. Since bias is sample specific, the technology representative set of calibrated samples has to be created. The described approach has been implemented for a comprehensive evaluation of optical scatterometry (OS) to determine readiness of OS for the 65 nm technology production. The tests covered nine OS applications representative of the technology. The testing revealed that OS metrology is mostly ready to support 65 nm technology production. Both spectral ellipsometry and angular reflectometry OS compete closely on all applications. OS demonstrates acceptable averaged bias for CD and sidewall angle for most applications. Correlation of OS to other metrologies is usually satisfactory. At the same time some problems have been observed. The majority of the tested applications show poor linearity for some measured parameters. Cross-correlation between parameters is usually the cause. OS has trouble to meet the semiconductor industry's tight fleet precision requirements. For all applications, OS tool matching is a major component of fleet precision. The evaluation also exposed some general CD metrology challenges. With accuracy allowance in a sub-nanometer range, it is difficult to find an adequate reference technique to verify and calibrate OS models. Atomic force microscopy (AFM) has been chosen as a reference technique during this evaluation, but it has limitations. Precision, sidewall profile resolution and tip finite dimensions are some of the AFM limitations. OS fleet TMU for many applications is unacceptably high. Further work is needed to better understand the impact of reference data uncertainty on these alarming results. It is clear that to achieve a desired sub-nanometer agreement between reference and OS data, one must pay scrupulous attention to every detail of the experiment.

Proceedings Article | 10 May 2005 Paper

The role of AFM in semiconductor technology development: the 65 nm technology node and beyond

Vladimir Ukraintsev, Christopher Baum, Gary Zhang, Craig Hall

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.602758

KEYWORDS: Critical dimension metrology, Atomic force microscopy, Scanning electron microscopy, Line width roughness, Calibration, Metrology, Semiconductors, 3D metrology, Transmission electron microscopy, Semiconducting wafers

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Proceedings Article | 2 June 2003 Paper

Effect of bias variation on total uncertainty of CD measurements

Vladimir Ukraintsev

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483512

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Metrology, Atomic force microscopy, Transistors, Data modeling, Process control, Statistical analysis, Optical proximity correction, Semiconductors

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Proceedings Article | 16 July 2002 Paper

Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect

Vladimir Ukraintsev, Mak Kulkarni, Christopher Baum, Karen Kirmse, Marco Guevremont, Suresh Lakkapragada, Kamal Bhatia, Pedro Herrera, Umar Whitney

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473457

KEYWORDS: Scatterometry, Critical dimension metrology, Atomic force microscopy, Scanning electron microscopy, Transmission electron microscopy, Silicon, Metrology, Dielectrics, Reactive ion etching, Semiconducting wafers

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Proceedings Article | 21 July 1994 Paper

Oxygen photochemistry on Pt(111)

Ian Harrison, Vladimir Ukraintsev, Alexander Artsyukhovich

Proceedings Volume 2125, (1994) https://doi.org/10.1117/12.180853

KEYWORDS: Electrons, Photochemistry, Oxygen, Telescopic pixel displays, Absorption, Molecules, Polarization, Spectroscopy, Signal detection, Ultraviolet radiation

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Showing 5 of 20 publications

SPIE Conference Volume | 17 June 2019

Metrology, Inspection, and Process Control for Microlithography XXXIII

SPIE Conference Volume | 26 April 2018

Metrology, Inspection, and Process Control for Microlithography XXXII

SPIE Conference Volume | 10 May 2017

Metrology, Inspection, and Process Control for Microlithography XXXI

SPIE Conference Volume | 6 June 2016

Metrology, Inspection, and Process Control for Microlithography XXX

Conference Committee Involvement (21)

Metrology, Inspection, and Process Control for Microlithography XXXIII

25 February 2019 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXXII

26 February 2018 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXXI

27 February 2017 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXX

22 February 2016 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXIX

23 February 2015 | San Jose, California, United States

Instrumentation, Metrology, and Standards for Nanomanufacturing VIII

20 August 2014 | San Diego, California, United States

Metrology, Inspection, and Process Control for Microlithography XXVIII

24 February 2014 | San Jose, California, United States

Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors VII

28 August 2013 | San Diego, California, United States

Scanning Microscopies 2013: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences

30 April 2013 | Baltimore, Maryland, United States

Metrology, Inspection, and Process Control for Microlithography XXVII

25 February 2013 | San Jose, California, United States

Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors VI

13 August 2012 | San Diego, California, United States

Scanning Microscopies 2012: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences

24 April 2012 | Baltimore, Maryland, United States

Metrology, Inspection, and Process Control for Microlithography XXVI

13 February 2012 | San Jose, California, United States

Scanning Microscopies 2011: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences

26 April 2011 | Orlando, Florida, United States

Metrology, Inspection, and Process Control for Microlithography XXV

28 February 2011 | San Jose, California, United States

Scanning Microscopy 2010

17 May 2010 | Monterey, California, United States

Metrology, Inspection, and Process Control for Microlithography XXIV

22 February 2010 | San Jose, California, United States

SPIE Scanning Microscopy

4 May 2009 | Monterey, United States

Metrology, Inspection, and Process Control for Microlithography XXIII

23 February 2009 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXII

25 February 2008 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXI

26 February 2007 | San Jose, California, United States

Showing 5 of 21 Conference Committees

Course Instructor

SC1006: Nanoscale Dimensional Metrology and Physical Characterization

This course provides attendees with a working knowledge of in-line critical dimension and reference metrology as well as with the basics of some techniques of semiconductor physical characterization. It is based on metrology and physical characterization practices currently employed in nanoscale semiconductor research, development and manufacturing. The course starts with definitions of commonly used metrology terms, reviews current challenges and explains the importance of metrology and characterization in achieving R&D and manufacturing goals. Basic critical dimensional metrology (ECD, SEM, SIM, OCD, 3DAFM) and some nanoscale physical characterization techniques (c-AFM, SCM, SSRM, KPSPM, SPVSPM, TERS) are reviewed. Their physical principles, merits and limitations are discussed. The material leads to the conclusion that only a combination of metrology and characterization techniques can solve the complex problems which semiconductor and nanotechnology research, development and manufacturing are facing today. The final topic of the course is about future hybrid instrumentation and methodologies which are coming to nanoscale dimensional metrology and physical characterization.

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SC956: Basics and Industrial Applications of AFM

This course provides attendees with a basic working knowledge of atomic force microscopy (AFM) and industrial critical dimension (CD) metrology. After an introduction to AFM technology the course will focus on modern industrial applications of CDAFM. The most common AFM applications in semiconductor and data storage R&D and manufacturing are reviewed. For every application AFM is compared with other possible metrology solutions, and the merits and limitations of each metrology solution are detailed. The final part of the course deals with SI-traceability and uncertainty of AFM measurements. AFM is presented as a potential reference metrology tool.

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SC943: Basics of In-Line Critical Dimension Metrology

This course provides attendees with a basic working knowledge of critical dimension metrology. The course starts with definitions of commonly used metrology terms, reviews current challenges and explains importance of metrology in achieving semiconductor manufacturing goals. All basic patterning metrology techniques are reviewed through the course. Their physical principles, merits and limitations are detailed. The material leads to the conclusion that only a combination of various metrology techniques may solve complex problems which semiconductor manufacturing is facing today. The final topic of the course is a reference dimensional metrology which cements various techniques in a single metrology solution.

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