Mr. Christian Holfeld Profile

Christian Holfeld

at GLOBALFOUNDRIES Dresden

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 19 September 2018 Paper

Deposition durability of e-beam mask repair

Thorsten Krome, Christian Holfeld, Tim Göhler, Pavel Nesladek

Proceedings Volume 10775, 1077511 (2018) https://doi.org/10.1117/12.2323905

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Printing, Phase shifts, Ozone, Opacity, Mask cleaning, Binary data, Chemistry

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Proceedings Article | 10 April 2013 Paper

Productivity improvement through automated operation of reticle defect inspection tools in a wafer fab environment

Christian Holfeld, Heiko Wagner, Anna Tchikoulaeva, Steffen Loebeth, Stephan Melzig, Yulin Zhang, Shinichi Tanabe, Takenori Katoh, Koichi Moriizumi

Proceedings Volume 8681, 868126 (2013) https://doi.org/10.1117/12.2014480

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Defect inspection, Photomasks, Manufacturing, Factory automation, Defect detection, Wafer manufacturing, Parallel processing

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Proceedings Article | 8 November 2012 Paper

Backside defect printability for contact layer with different reticle blank material

Guoxiang Ning, Christian Holfeld, Daniel Fischer, Paul Ackmann, Andre Holfeld, Karin Kurth, Martin Sczyrba, Tino Hertzsch, Rolf Seltmann, Angeline Ho, Fang GN

Proceedings Volume 8522, 85221X (2012) https://doi.org/10.1117/12.958607

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Reticles, Photomasks, Phase shifts, Binary data, Printing, Design for manufacturability, Manufacturing, Defect detection

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Proceedings Article | 14 October 2011 Paper

Printability and detection of backside defects on photomasks

Guoxiang Ning, Christian Holfeld, Anna Tchikoulaeva, Martin Sczyrba, Angeline Ho, Karsten Bubke, Soon Yoeng Tan, Andre Holfeld, Byoung Il Choi

Proceedings Volume 8166, 81664D (2011) https://doi.org/10.1117/12.899127

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Reticles, Particles, Photomasks, Inspection, Glasses, Defect detection, Manufacturing, Metals

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Reticles are contaminated during its lifetime and can catch particles as large as several tens of microns. Such defects on the backside of photomasks are usually considered as uncritical and thus do not receive much attention. Backside defects are out of focus by the mask thickness during wafer exposure and cannot be directly imaged on wafer. However, the shadow of the defects changes the local illumination of the mask patterns and may result in spatial variation of critical dimension (CD) on wafer depending on numerical aperture (NA) and pupil shape. There have been only a few investigations on printability of backside defects in the past, and no data are available for the most advanced technology nodes. Reticles are regularly inspected for particles on the glass side in the wafer fab but limits for acceptable defect size are based on estimations. Detection of non-acceptable particles causes exposed wafers being either delayed or reworked with impact on throughput and cost performance. It is therefore important to gain better understanding of critical sizes of backside defects and of appropriate detection capabilities. We have designed and manufactured a test mask with repeating patterns of 20nm, 28nm and 40nm technology node ranging from contact and line/space critical layers to non-critical implant layers. Programmed chrome defects of varying size are placed on the backside of the mask opposite to the repeating front side patterns in order to measure the spatial variation of transmission and wafer CD caused by the backside defects. The test mask was printed on a bare Silicon wafer and the size of printed features was measured by spatial sampling. Wafer CD variation for different backside defect sizes are demonstrated and compared for 28nm node first metal layer. Although the opaque chrome defects on the backside do not behave like real particles they aim on deriving a print threshold for backside particles based on actual wafer data. After such critical size of backside defects is obtained the reticle was also utilized to investigate the detection ability of backside defects by defect inspection of the reticle.

Proceedings Article | 14 October 2011 Paper

Reticle process monitoring and qualification based on reticle CDU and wafer CDU correlation

Guoxiang Ning, Byoung Il Choi, Christian Holfeld, Yee Ta Ngow, Sia Kim Tan, Anna Tchikoulaeva, Fang Hong Gn

Proceedings Volume 8166, 81662N (2011) https://doi.org/10.1117/12.898801

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Metals, Etching, Photomasks, Multilayers, 3D metrology, Scanners, Metrology

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Proceedings Article | 23 March 2010 Paper

Analysis and characterization of contamination in EUV reticles

Uzodinma Okoroanyanwu, Kornelia Dittmar, Torsten Fahr, Tom Wallow, Bruno La Fontaine, Obert Wood, Christian Holfeld, Karsten Bubke, Jan-Hendrik Peters

Proceedings Volume 7636, 76361Y (2010) https://doi.org/10.1117/12.847269

KEYWORDS: Reticles, Contamination, Reflectivity, Extreme ultraviolet lithography, Extreme ultraviolet, Chemical analysis, Carbon, Raman spectroscopy, Spectroscopy, Thin films

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A host of complementary imaging techniques (Scanning Electron Microscopy), surface analytical technique (Auger Electron Spectroscopy, AES), chemical analytical and speciation techniques (Grazing Incidence Reflectance Fourier-Transform Infrared Spectroscopy, GIR-FTIR; and Raman spectroscopy) have been assessed for their sensitivity and effectiveness in analyzing contamination on three EUV reticles that were contaminated to varying degrees. The first reticle was contaminated as a result of its exposure experience on the SEMATECH EUV Micro Exposure Tool (MET) at Lawrence Berkeley National Laboratories, where it was exposed to up to 80 hours of EUV radiation. The second reticle was a full-field reticle, specifically designed to monitor molecular contamination, and exposed to greater than 1600J/cm² of EUV radiation on the ASML Alpha Demo Tool (ADT) in Albany Nanotech in New York. The third reticle was intentionally contaminated with hydrocarbons in the Microscope for Mask Imaging and Contamination Studies (MIMICS) tool at the College of Nanoscale Sciences of State University of New York at Albany. The EUV reflectivities of some of these reticles were measured on the Advanced Light Source EUV Reflectomer at Lawrence Berkeley National Laboratories and PTB Bessy in Berlin, respectively. Analysis and characterization of thin film contaminants on the two EUV reticles exposed to varying degrees of EUV radiation in both MET and ADT confirm that the two most common contamination types are carbonization and surface oxidation, mostly on the exposed areas of the reticle, and with the MET being significantly more susceptible to carbon contamination than the ADT. While AES in both surface scanning and sputter mode is sensitive and efficient in analyzing thin contaminant films (of a few nanometers), GIRFTIR is sensitive to thick films (of order of a 100 nm or more on non-infra-red reflecting substrates), Raman spectroscopy is not compatible with analyzing such contaminants because of laser-induced evaporation of the contaminant film. SEM and EUV reflectometry are effective in quantifying the impact of contamination on imaging performance and reflectivity, respectively.

Proceedings Article | 23 March 2010 Paper

EUV lithography at the 22nm technology node

Obert Wood, Chiew-Seng Koay, Karen Petrillo, Hiroyuki Mizuno, Sudhar Raghunathan, John Arnold, Dave Horak, Martin Burkhardt, Gregory McIntyre, Yunfei Deng, Bruno La Fontaine, Uzo Okoroanyanwu, Tom Wallow, Guillaume Landie, Theodorus Standaert, Sean Burns, Christopher Waskiewicz, Hirohisa Kawasaki, James H.-C. Chen, Matthew Colburn, Bala Haran, Susan S.-C. Fan, Yunpeng Yin, Christian Holfeld, Jens Techel, Jan-Hendrik Peters, Sander Bouten, Brian Lee, Bill Pierson, Bart Kessels, Robert Routh, Kevin Cummings

Proceedings Volume 7636, 76361M (2010) https://doi.org/10.1117/12.847049

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Immersion lithography, Double patterning technology, Optical proximity correction, Printing, Lithography, Optical lithography, Metals

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Proceedings Article | 20 March 2010 Paper

Assessing EUV mask defectivity

Uzodinma Okoroanyanwu, Anna Tchikoulaeva, Paul Ackmann, Obert Wood, Bruno La Fontaine, Karsten Bubke, Christian Holfeld, Jan Hendrik Peters, Sumanth Kini, Sterling Watson, Isaac Lee, Bo Mu, Phillip Lim, Sudhar Raghunathan, Carol Boye

Proceedings Volume 7636, 76360J (2010) https://doi.org/10.1117/12.847348

KEYWORDS: Reticles, Inspection, Photomasks, Semiconducting wafers, Extreme ultraviolet, Defect detection, Line edge roughness, Scanning electron microscopy, Defect inspection, Optical lithography

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Proceedings Article | 20 March 2010 Paper

Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool

Uzodinma Okoroanyanwu, Aiqin Jiang, Kornelia Dittmar, Torsten Fahr, Thomas Laursen, Obert Wood, Kevin Cummings, Christian Holfeld, Jan-Hendrik Peters, Eric Gullikson, Bruno La Fontaine

Proceedings Volume 7636, 76360H (2010) https://doi.org/10.1117/12.847267

KEYWORDS: Reticles, Contamination, Extreme ultraviolet lithography, Reflectivity, Curium, Extreme ultraviolet, Semiconducting wafers, Carbon, Silicon, Tantalum

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Proceedings Article | 20 March 2010 Paper

Actinic imaging of native and programmed defects on a full-field mask

I. Mochi, K. Goldberg, B. La Fontaine, A. Tchikoulaeva, C. Holfeld

Proceedings Volume 7636, 76361A (2010) https://doi.org/10.1117/12.846670

KEYWORDS: Extreme ultraviolet, Photomasks, Scanning electron microscopy, Inspection, Deep ultraviolet, Reticles, Semiconducting wafers, Extreme ultraviolet lithography, Multilayers, Opacity

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Proceedings Article | 18 March 2009 Paper

EUVL reticle defectivity evaluation

A. Tchikoulaeva, U. Okoroanyanwu, O. Wood, B. La Fontaine, C. Holfeld, S. Kini, M. Peikert, C. Boye, C.-S. Koay, K. Petrillo, H. Mizuno

Proceedings Volume 7271, 727117 (2009) https://doi.org/10.1117/12.815525

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Wafer inspection, Scanning electron microscopy, Photomasks, Defect detection, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers

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Proceedings Article | 17 October 2008 Paper

An investigation of EUV lithography defectivity

Kevin Cummings, Thomas Laursen, Bill Pierson, Sang-in Han, Robert Watso, Youri van Dommelen, Brian Lee, Yunfei Deng, Bruno La Fontaine, Thomas Wallow, Uzo Okoroanyanwu, Obert Wood, Anna Tchikoulaeva, Christian Holfeld, Jan Hendrick Peters, Chiew-seng Koay, Karen Petrillo, Tony DiBiase, Sumanth Kini, Hiroyuki Mizuno

Proceedings Volume 7122, 71222G (2008) https://doi.org/10.1117/12.801528

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Inspection, Particles, Scanning electron microscopy, Wafer inspection, Defect inspection, Silicon

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Proceedings Article | 1 November 2007 Paper

Pellicle dimensions for high NA photomasks

Frank Erber, Thomas Schulmeyer, Christian Holfeld

Proceedings Volume 6730, 67303Y (2007) https://doi.org/10.1117/12.746681

KEYWORDS: Pellicles, Photomasks, Inspection, Scanners, Manufacturing, Lithography, Sodium, Inspection equipment, Image registration, Image processing

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Proceedings Article | 25 October 2007 Paper

Wafer inspection as alternative approach to mask defect qualification

Christian Holfeld, Frank Katzwinkel, Uwe Seifert, Andreas Mothes, Jan Hendrik Peters

Proceedings Volume 6730, 673023 (2007) https://doi.org/10.1117/12.746398

KEYWORDS: Photomasks, Inspection, Wafer inspection, Semiconducting wafers, Printing, Defect detection, Defect inspection, SRAF, Lithography, Optical proximity correction

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Proceedings Article | 20 October 2006 Paper

Limitations of optical reticle inspection for 45-nm node and beyond

S. Teuber, A. Bzdurek, A. Dürr, J. Heumann, C. Holfeld

Proceedings Volume 6349, 63490T (2006) https://doi.org/10.1117/12.686078

KEYWORDS: Inspection, Photomasks, Image transmission, Reticles, Printing, Optical inspection, Defect detection, Optical lithography, Semiconducting wafers, Defect inspection

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Proceedings Article | 23 March 2006 Paper

Defect printability study using EUV lithography

Christian Holfeld, Karsten Bubke, Falk Lehmann, Bruno La Fontaine, Adam Pawloski, Siegfried Schwarzl, Frank-Michael Kamm, Thomas Graf, Andreas Erdmann

Proceedings Volume 6151, 61510U (2006) https://doi.org/10.1117/12.656386

KEYWORDS: Photomasks, Semiconducting wafers, Printing, Photoresist processing, Extreme ultraviolet lithography, Image processing, Scanning electron microscopy, Extreme ultraviolet, Lithography, Projection systems

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Proceedings Article | 22 March 2006 Paper

Demonstration of phase-shift masks for extreme-ultraviolet lithography

Bruno La Fontaine, Adam Pawloski, Obert Wood, Yunfei Deng, Harry Levinson, Patrick Naulleau, Paul Denham, Eric Gullikson, Brian Hoef, Christian Holfeld, Christian Chovino, Florian Letzkus

Proceedings Volume 6151, 61510A (2006) https://doi.org/10.1117/12.652212

KEYWORDS: Photomasks, Extreme ultraviolet, Reflectivity, Etching, Extreme ultraviolet lithography, Printing, Multilayers, Metrology, Scanning electron microscopy, Lithography

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Proceedings Article | 9 November 2005 Paper

Detailed characterization of inspection tools: capabilities and limitations of the KLA 576

J. Heumann, R. Moses, C. Holfeld, N. Schmidt, C. Aquino

Proceedings Volume 5992, 599246 (2005) https://doi.org/10.1117/12.637782

KEYWORDS: Sensors, Inspection, Photomasks, Detection and tracking algorithms, Extreme ultraviolet, Defect detection, Critical dimension metrology, Data modeling, Calibration, Systems modeling

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Proceedings Article | 8 November 2005 Paper

EUVL mask manufacturing: technologies and results

Florian Letzkus, Joerg Butschke, Mathias Irmscher, Holger Sailer, Uwe Dersch, Christian Holfeld

Proceedings Volume 5992, 59922A (2005) https://doi.org/10.1117/12.628957

KEYWORDS: Etching, Extreme ultraviolet lithography, Wet etching, Photomasks, Dry etching, Chromium, Electron beam lithography, Scanning electron microscopy, Silicon, Manufacturing

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Proceedings Article | 28 June 2005 Paper

EUV mask image placement management in writing, registration, and exposure tools

Eric Cotte, Uwe Dersch, Christian Holfeld, Uwe Mickan, Holger Seitz, Thomas Leutbecher, Gunter Hess

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617484

KEYWORDS: Photomasks, Reticles, Optical lithography, Extreme ultraviolet, Photovoltaics, Extreme ultraviolet lithography, Image registration, Tolerancing, Electron beam lithography, Image quality

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Proceedings Article | 6 May 2005 Paper

Comparison of EUV mask architectures by process window analysis

Siegfried Schwarzl, Frank-Michael Kamm, Stefan Hirscher, Klaus Lowack, Wolf-Dieter Domke, Markus Bender, Stefan Wurm, Adam Pawloski, Bruno La Fontaine, Christian Holfeld, Uwe Dersch, Florian Letzkus, Joerg Butschke

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599343

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Multilayers, Printing, Scanning electron microscopy, Cadmium, Extreme ultraviolet lithography, Binary data, Imaging systems

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Proceedings Article | 6 December 2004 Paper

SiO2 buffer-etch processes with a TaN absorber for EUV mask fabrication

Florian Letzkus, Joerg Butschke, Corinna Koepernik, Christian Holfeld, Josef Mathuni, Lutz Aschke, Frank Sobel

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569265

KEYWORDS: Etching, Photomasks, Silicon, Dry etching, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Extreme ultraviolet lithography, Chemistry, Mask making

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Proceedings Article | 6 December 2004 Paper

Comparative study of mask architectures for EUV lithography

Adam Pawloski, Bruno La Fontaine, Harry Levinson, Stefan Hirscher, Siegfried Schwarzl, Klaus Lowack, Frank-Michael Kamm, Markus Bender, Wolf-Dieter Domke, Christian Holfeld, Uwe Dersch, Patrick Naulleau, Florian Letzkus, Joerg Butschke

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569289

KEYWORDS: Photomasks, Multilayers, Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Reflectors, Cadmium, Critical dimension metrology, Photoresist materials, Scanning electron microscopy

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Proceedings Article | 6 December 2004 Paper

Numerical and experimental study of oxide growth on EUV mask capping layers

Eric Cotte, Christian Holfeld, Uwe Dersch, Guenther Ruhl, Jan Perlich

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569276

KEYWORDS: Reflectivity, Silicon, Oxides, Data modeling, Extreme ultraviolet, Interfaces, Performance modeling, Inspection, Silica, Photomasks

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Proceedings Article | 2 June 2004 Paper

Optimized processes and absorber-stack materials for EUV masks

Josef Mathuni, Jenspeter Rau, Frank-Michael Kamm, Guenther Ruhl, Ch. Holfeld, Florian Letzkus, C. Koepernik, Joerg Butschke

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568010

KEYWORDS: Etching, Photomasks, Extreme ultraviolet, Chromium, Tantalum, Critical dimension metrology, Materials processing, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers

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Showing 5 of 25 publications

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