Dr. Jan Hendrik Peters Profile

Dr. Jan Hendrik Peters

International Management Consultant and Owner at bmbg Consult

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Publications (30)

Proceedings Article | 9 November 2015 Paper

Actinic review of EUV masks: status and recent results of the AIMS EUV system

Sascha Perlitz, Jan Hendrik Peters, Markus Weiss, Dirk Hellweg, Renzo Capelli, Krister Magnusson, Matt Malloy, Stefan Wurm

Proceedings Volume 9635, 96351D (2015) https://doi.org/10.1117/12.2205054

KEYWORDS: Extreme ultraviolet, Photomasks, Prototyping, Extreme ultraviolet lithography, Electromagnetic coupling, Metrology, Calibration, Scanners, Image acquisition, Image processing

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Proceedings Article | 4 September 2015 Paper

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Vibhu Jindal, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9661, 96610O (2015) https://doi.org/10.1117/12.2196120

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect inspection, Extreme ultraviolet, Imaging systems, Wafer inspection, Optical inspection, Wafer-level optics, Optics manufacturing

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The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow’s requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection.

To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today’s patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the need for high-speed e-beam inspection and then provides initial imaging results from EUV masks and wafers from 61 and 91 beam demonstration systems. Progress towards high resolution and consistent intentional defect arrays (IDA) is also shown.

Proceedings Article | 19 March 2015 Paper

Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing

Matt Malloy, Brad Thiel, Benjamin Bunday, Stefan Wurm, Maseeh Mukhtar, Kathy Quoi, Thomas Kemen, Dirk Zeidler, Anna Lena Eberle, Tomasz Garbowski, Gregor Dellemann, Jan Hendrik Peters

Proceedings Volume 9423, 942319 (2015) https://doi.org/10.1117/12.2175535

KEYWORDS: Inspection, Defect inspection, Photomasks, Semiconducting wafers, Optical inspection, Wafer inspection, Extreme ultraviolet, Manufacturing, Prototyping, Optics manufacturing

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Proceedings Article | 16 March 2015 Paper

Actinic review of EUV masks: Status and recent results of the AIMS EUV system

Markus Weiss, Dirk Hellweg, Markus Koch, Jan Hendrik Peters, Sascha Perlitz, Anthony Garetto, Krister Magnusson, Renzo Capelli, Vibhu Jindal

Proceedings Volume 9422, 942219 (2015) https://doi.org/10.1117/12.2086265

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Imaging systems, Line width roughness, Scanners, Prototyping, EUV optics, Metrology, Reflectivity

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Proceedings Article | 29 October 2014 Paper

AIMS EUV first light imaging performance

Anthony Garetto, Renzo Capelli, Krister Magnusson, Jan Hendrik Peters, Sascha Perlitz, Ulrich Matejka, Dirk Hellweg, Markus Weiss, Michael Goldstein

Proceedings Volume 9235, 92350N (2014) https://doi.org/10.1117/12.2068308

KEYWORDS: Extreme ultraviolet, Photomasks, Scanners, Extreme ultraviolet lithography, Inspection, Electromagnetic coupling, Scanning electron microscopy, Prototyping, Manufacturing, Logic

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SPIE Journal Paper | 27 October 2014

Defect mitigation considerations for EUV photomasks

Anthony Garetto, Renzo Capelli, Frederik Blumrich, Krister Magnusson, Markus Waiblinger, Thomas Scherübl, Jan Hendrik Peters, Michael Goldstein

JM3, Vol. 13, Issue 04, 043006, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.043006

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Scanners, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Deep ultraviolet, Atomic force microscopy, Manufacturing

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Proceedings Article | 24 April 2014 Paper

Actinic review of EUV masks: first results from the AIMS EUV system integration

Markus Weiss, Dirk Hellweg, Jan Hendrik Peters, Sascha Perlitz, Anthony Garetto, Michael Goldstein

Proceedings Volume 9048, 90480X (2014) https://doi.org/10.1117/12.2046302

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Reticles, Scanners, System integration, Metrology, Prototyping, Manufacturing

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Proceedings Article | 1 October 2013 Paper

Status of the AIMS EUV development project

Anthony Garetto, Jan Hendrik Peters, Dirk Hellweg, Markus Weiss

Proceedings Volume 8886, 88860I (2013) https://doi.org/10.1117/12.2031611

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Photomasks, Electromagnetic coupling, Metrology, Prototyping, Inspection, Manufacturing, Reticles

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Proceedings Article | 8 November 2012 Paper

Status of the AIMS(TM) EUV Project

Anthony Garetto, Jan Hendrik Peters, Sascha Perlitz, Ulrich Matejka, Dirk Hellweg, Markus Weiss

Proceedings Volume 8522, 852220 (2012) https://doi.org/10.1117/12.981345

KEYWORDS: Extreme ultraviolet, Photomasks, Prototyping, Manufacturing, Climatology, Particles, Inspection, Scanners, Metrology, Extreme ultraviolet lithography

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Proceedings Article | 23 March 2012 Paper

Closing the infrastructure gap: status of the AIMS EUV project

Dirk Hellweg, Markus Weiss, Sascha Perlitz, Jan Hendrik Peters, Wolfgang Harnisch, Michael Goldstein

Proceedings Volume 8322, 83220L (2012) https://doi.org/10.1117/12.918691

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Scanners, Inspection, Manufacturing, Semiconducting wafers, Multilayers, Mirrors, Metrology

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Proceedings Article | 14 October 2011 Paper

Development status and infrastructure progress update of aerial imaging measurements on EUV masks

Sascha Perlitz, Wolfgang Harnisch, Ulrich Strößner, Jan Hendrik Peters, Markus Weiss, Dirk Hellweg

Proceedings Volume 8166, 816610 (2011) https://doi.org/10.1117/12.899038

KEYWORDS: Extreme ultraviolet, Photomasks, Manufacturing, Plasma, Extreme ultraviolet lithography, Airborne remote sensing, Light sources, Metrology, EUV optics, Electron beam lithography

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SPIE Journal Paper | 1 January 2011

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

Lieve Van Look, Joost Bekaert, Bart Laenens, Geert Vandenberghe, Jan Richter, Karsten Bubke, Jan Hendrik Peters, Koen Schreel, Mircea Dusa

JM3, Vol. 10, Issue 1, 013009, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541779

KEYWORDS: Pellicles, Semiconducting wafers, Critical dimension metrology, Reticles, Apodization, Lithography, Photomasks, Transmittance, Optical proximity correction, Phase shifts

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Proceedings Article | 23 March 2010 Paper

Analysis and characterization of contamination in EUV reticles

Uzodinma Okoroanyanwu, Kornelia Dittmar, Torsten Fahr, Tom Wallow, Bruno La Fontaine, Obert Wood, Christian Holfeld, Karsten Bubke, Jan-Hendrik Peters

Proceedings Volume 7636, 76361Y (2010) https://doi.org/10.1117/12.847269

KEYWORDS: Reticles, Contamination, Reflectivity, Extreme ultraviolet lithography, Extreme ultraviolet, Chemical analysis, Carbon, Raman spectroscopy, Spectroscopy, Thin films

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A host of complementary imaging techniques (Scanning Electron Microscopy), surface analytical technique (Auger Electron Spectroscopy, AES), chemical analytical and speciation techniques (Grazing Incidence Reflectance Fourier-Transform Infrared Spectroscopy, GIR-FTIR; and Raman spectroscopy) have been assessed for their sensitivity and effectiveness in analyzing contamination on three EUV reticles that were contaminated to varying degrees. The first reticle was contaminated as a result of its exposure experience on the SEMATECH EUV Micro Exposure Tool (MET) at Lawrence Berkeley National Laboratories, where it was exposed to up to 80 hours of EUV radiation. The second reticle was a full-field reticle, specifically designed to monitor molecular contamination, and exposed to greater than 1600J/cm² of EUV radiation on the ASML Alpha Demo Tool (ADT) in Albany Nanotech in New York. The third reticle was intentionally contaminated with hydrocarbons in the Microscope for Mask Imaging and Contamination Studies (MIMICS) tool at the College of Nanoscale Sciences of State University of New York at Albany. The EUV reflectivities of some of these reticles were measured on the Advanced Light Source EUV Reflectomer at Lawrence Berkeley National Laboratories and PTB Bessy in Berlin, respectively. Analysis and characterization of thin film contaminants on the two EUV reticles exposed to varying degrees of EUV radiation in both MET and ADT confirm that the two most common contamination types are carbonization and surface oxidation, mostly on the exposed areas of the reticle, and with the MET being significantly more susceptible to carbon contamination than the ADT. While AES in both surface scanning and sputter mode is sensitive and efficient in analyzing thin contaminant films (of a few nanometers), GIRFTIR is sensitive to thick films (of order of a 100 nm or more on non-infra-red reflecting substrates), Raman spectroscopy is not compatible with analyzing such contaminants because of laser-induced evaporation of the contaminant film. SEM and EUV reflectometry are effective in quantifying the impact of contamination on imaging performance and reflectivity, respectively.

Proceedings Article | 23 March 2010 Paper

EUV lithography at the 22nm technology node

Obert Wood, Chiew-Seng Koay, Karen Petrillo, Hiroyuki Mizuno, Sudhar Raghunathan, John Arnold, Dave Horak, Martin Burkhardt, Gregory McIntyre, Yunfei Deng, Bruno La Fontaine, Uzo Okoroanyanwu, Tom Wallow, Guillaume Landie, Theodorus Standaert, Sean Burns, Christopher Waskiewicz, Hirohisa Kawasaki, James H.-C. Chen, Matthew Colburn, Bala Haran, Susan S.-C. Fan, Yunpeng Yin, Christian Holfeld, Jens Techel, Jan-Hendrik Peters, Sander Bouten, Brian Lee, Bill Pierson, Bart Kessels, Robert Routh, Kevin Cummings

Proceedings Volume 7636, 76361M (2010) https://doi.org/10.1117/12.847049

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Immersion lithography, Double patterning technology, Optical proximity correction, Printing, Lithography, Optical lithography, Metals

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Proceedings Article | 20 March 2010 Paper

Assessing EUV mask defectivity

Uzodinma Okoroanyanwu, Anna Tchikoulaeva, Paul Ackmann, Obert Wood, Bruno La Fontaine, Karsten Bubke, Christian Holfeld, Jan Hendrik Peters, Sumanth Kini, Sterling Watson, Isaac Lee, Bo Mu, Phillip Lim, Sudhar Raghunathan, Carol Boye

Proceedings Volume 7636, 76360J (2010) https://doi.org/10.1117/12.847348

KEYWORDS: Reticles, Inspection, Photomasks, Semiconducting wafers, Extreme ultraviolet, Defect detection, Line edge roughness, Scanning electron microscopy, Defect inspection, Optical lithography

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Proceedings Article | 20 March 2010 Paper

Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool

Uzodinma Okoroanyanwu, Aiqin Jiang, Kornelia Dittmar, Torsten Fahr, Thomas Laursen, Obert Wood, Kevin Cummings, Christian Holfeld, Jan-Hendrik Peters, Eric Gullikson, Bruno La Fontaine

Proceedings Volume 7636, 76360H (2010) https://doi.org/10.1117/12.847267

KEYWORDS: Reticles, Contamination, Extreme ultraviolet lithography, Reflectivity, Curium, Extreme ultraviolet, Semiconducting wafers, Carbon, Silicon, Tantalum

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Proceedings Article | 4 March 2010 Paper

Experimental study of effect of pellicle on optical proximity fingerprint for 1.35 NA immersion ArF lithography

Lieve Van Look, Joost Bekaert, Bart Laenens, Geert Vandenberghe, Jan Richter, Karsten Bubke, Jan Hendrik Peters, Koen Schreel, Mircea Dusa

Proceedings Volume 7640, 76401Y (2010) https://doi.org/10.1117/12.848219

KEYWORDS: Pellicles, Semiconducting wafers, Reticles, Lithography, Apodization, Photomasks, Transmittance, Optical proximity correction, Phase shifts, Solids

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Proceedings Article | 23 September 2009 Paper

Mask performance improvement with mapping

Clemens Utzny, Eric Cotte, Timo Wandel, Jan Hendrik Peters

Proceedings Volume 7488, 74880N (2009) https://doi.org/10.1117/12.834302

KEYWORDS: Photomasks, Critical dimension metrology, Signal to noise ratio, Principal component analysis, Process control, Image registration, Electron beam melting, Error analysis, Lithography, Tolerancing

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SPIE Journal Paper | 1 January 2009

Mask characterization for double patterning lithography

Karsten Bubke, Robert de Kruif, Jan Peters, Mircea Dusa, Brid Connolly

JM3, Vol. 8, Issue 01, 011004, (January 2009) https://doi.org/10.1117/12.10.1117/1.3023078

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Overlay metrology, Double patterning technology, Lithography, Image registration, Metrology, Critical dimension metrology, Extreme ultraviolet lithography

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Proceedings Article | 17 October 2008 Paper

An investigation of EUV lithography defectivity

Kevin Cummings, Thomas Laursen, Bill Pierson, Sang-in Han, Robert Watso, Youri van Dommelen, Brian Lee, Yunfei Deng, Bruno La Fontaine, Thomas Wallow, Uzo Okoroanyanwu, Obert Wood, Anna Tchikoulaeva, Christian Holfeld, Jan Hendrick Peters, Chiew-seng Koay, Karen Petrillo, Tony DiBiase, Sumanth Kini, Hiroyuki Mizuno

Proceedings Volume 7122, 71222G (2008) https://doi.org/10.1117/12.801528

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Inspection, Particles, Scanning electron microscopy, Wafer inspection, Defect inspection, Silicon

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Proceedings Article | 17 October 2008 Paper

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

Kurt Kimmel, Ingo Hoellein, Jan Hendrick Peters, Paul Ackmann, Brid Connolly, Craig West

Proceedings Volume 7122, 712219 (2008) https://doi.org/10.1117/12.801685

KEYWORDS: Photomasks, Semiconducting wafers, Scanners, Inspection, Wafer inspection, Critical dimension metrology, Printing, Metrology, Manufacturing, Defect inspection

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Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

Proceedings Article | 2 May 2008 Paper

EUV blank inspection

J. Peters, C. Tonk, D. Spriegel, Hak-Seung Han, Wonil Cho, Stefan Wurm

Proceedings Volume 6792, 67920F (2008) https://doi.org/10.1117/12.798594

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Printing, Defect detection, Particles, Quartz, Signal detection, Data centers, Defect inspection

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Proceedings Article | 2 May 2008 Paper

Wafer based mask characterization for double patterning lithography

Robert de Kruif, Karsten Bubke, Gert-Jan Janssen, Eddy van der Heijden, Jörg Fochler, Mircea Dusa, Jan Hendrik Peters, Paul de Haas, Brid Connolly

Proceedings Volume 6792, 679204 (2008) https://doi.org/10.1117/12.798515

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Lithography, Double patterning technology, Overlay metrology, Photoresist processing, Image registration

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Proceedings Article | 30 October 2007 Paper

Mask characterization for double patterning lithography

Karsten Bubke, Eric Cotte, Jan Hendrik Peters, Robert de Kruif, Mircea Dusa, Joerg Fochler, Brid Connolly

Proceedings Volume 6730, 67301H (2007) https://doi.org/10.1117/12.747006

KEYWORDS: Photomasks, Reticles, Critical dimension metrology, Overlay metrology, Image registration, Semiconducting wafers, Lithography, Double patterning technology, Extreme ultraviolet lithography, Metrology

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Double patterning (DPT) lithography is seen industry-wide as an intermediate solution for the 32nm node if high index immersion as well as extreme ultraviolet lithography are not ready for a timely release for production. Apart from the obvious drawbacks of additional exposure, processing steps and the resulting reduced throughput, DPT possesses a number of additional technical challenges. This relates to, e.g., exposure tool capability, the actual applied process in the wafer fab but also to mask performance and metrology. In this paper we will address the mask performance. To characterize the mask performance in an actual DPT process, conventional parameters need to be re-evaluated. Furthermore new parameters might be more suitable to describe mask capability. This refers to, e.g., reticle to reticle overlay but also to CD differences between masks of a DPT reticle set. A DPT target of reticle to reticle induced overlay of 6nm, 3σ at mask level was proposed recently for the 32nm node. The results show that this target can be met. Besides that, local CD variations and local displacement become critical. Finally, the actual mask metrology for determination of these parameters might not be trivial and needs to be set up and characterized properly. In this paper we report on the performance of two-reticle sets based on a design developed to study the impact of mask global and local placement errors on a DPT dual line process. In a first step we focus on reticle to reticle overlay. The overlay between two masks evaluated for different wafer overlay targets is compared with measurements on actual resolution structures. In a second step, mask to mask CD variations are addressed. Off-target CD differences as well as variations of CD signatures on both reticles of a set are investigated. Finally, local CD variations and local displacements are examined. To this aim, local variations of adjacent structures on the reticle are characterized. The contribution of local effects to the overall CD and registration budget is estimated.

Proceedings Article | 25 October 2007 Paper

Wafer inspection as alternative approach to mask defect qualification

Christian Holfeld, Frank Katzwinkel, Uwe Seifert, Andreas Mothes, Jan Hendrik Peters

Proceedings Volume 6730, 673023 (2007) https://doi.org/10.1117/12.746398

KEYWORDS: Photomasks, Inspection, Wafer inspection, Semiconducting wafers, Printing, Defect detection, Defect inspection, SRAF, Lithography, Optical proximity correction

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Proceedings Article | 20 October 2006 Paper

Manufacturing of the first EUV full-field scanner mask

Uwe Dersch, Rico Buettner, Christian Chovino, Steffen Franz, Torben Heins, Holger Herguth, Jan Hendrik Peters, Thomas Rode, Florian Letzkus, Joerg Butschke, Mathias Irmscher

Proceedings Volume 6349, 63492G (2006) https://doi.org/10.1117/12.686035

KEYWORDS: Etching, Extreme ultraviolet, Photomasks, Reflectivity, Manufacturing, Extreme ultraviolet lithography, Scanners, Optical lithography, Photoresist processing, Chromium

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Proceedings Article | 21 June 2006 Paper

The first full-field EUV masks ready for printing

Uwe Mickan, Rogier Groeneveld, Marcel Demarteau, Jan Hendrik Peters, Uwe Dersch, Günter Hess, Holger Seitz

Proceedings Volume 6281, 628105 (2006) https://doi.org/10.1117/12.692629

KEYWORDS: Photomasks, Extreme ultraviolet, Reticles, Etching, Tolerancing, Image processing, Coating, Printing, Lithography, Reflectivity

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Proceedings Article | 28 June 2005 Paper

Status of EUVL mask development in Europe

Jan Peters

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617470

KEYWORDS: Photomasks, Extreme ultraviolet, Reflectivity, Etching, Extreme ultraviolet lithography, Semiconducting wafers, Optical lithography, Polishing, Critical dimension metrology, Dry etching

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Proceedings Article | 12 May 2005 Paper

Determination of mask-induced polarization effects occurring in hyper NA immersion lithography

Silvio Teuber, Karsten Bubke, Ingo Hollein, Ralf Ziebold, Jan Peters

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598641

KEYWORDS: Polarization, Photomasks, Diffraction, Diffraction gratings, Binary data, Semiconducting wafers, Phase shifts, Immersion lithography, Manufacturing, Reflection

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Proceedings Article | 20 August 2004 Paper

Mask R&D activities at the Advanced Mask Technology Center

Markus Dilger, Jan Hendrik Peters

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557674

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Etching, Semiconducting wafers, Pellicles, Printing, Materials processing, Reflectivity, Semiconductors

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Showing 5 of 30 publications

Conference Committee Involvement (16)

38th European Mask and Lithography Conference

19 June 2023 | Dresden, Germany

Photomask Technology

27 September 2021 | Online Only, United States

Photomask Technology

21 September 2020 | Online Only, California, United States

Photomask Technology

16 September 2019 | Monterey, California, United States

Photomask Technology

17 September 2018 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

33rd European Mask and Lithography Conference

26 June 2017 | Dresden, Germany

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VI

23 February 2015 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography V

24 February 2014 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IV

25 February 2013 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography III

13 February 2012 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography II

28 February 2011 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography

22 February 2010 | San Jose, California, United States

Alternative Lithographic Technologies

24 February 2009 | San Jose, California, United States

Showing 5 of 16 Conference Committees

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