Dr. Thomas Franz Karl Scheruebl Profile

Dr. Thomas Franz Karl Scheruebl

Head of Strategic Business Development (SMS) at Carl Zeiss SMT GmbH

SPIE Involvement:

Conference Program Committee | Author

Publications (45)

Proceedings Article | 22 February 2021 Presentation

Excursion prevention by edge placement error reduction using photomask tuning

Rolf Seltmann, Tino Hertzsch, Matthias Ruhm, Ofir Sharoni, Thomas Scheruebl

Proceedings Volume 11611, 1161120 (2021) https://doi.org/10.1117/12.2585642

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Proceedings Article | 3 October 2019 Paper

Improving chip performance by photomask tuning: ultimate intra-field CD control as a major part of an overall excursion prevention strategy

Rolf Seltmann, Aravind Narayana Samy, Thomas Thamm, Ofir Sharoni, Yael Sufrin, Avi Cohen, Thomas Scheruebl

Proceedings Volume 11148, 111480L (2019) https://doi.org/10.1117/12.2536896

KEYWORDS: Photomasks, Semiconducting wafers, Optical lithography, Critical dimension metrology, Failure analysis, Scanners, 3D modeling, Line width roughness, Reticles

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Proceedings Article | 5 October 2016 Paper

To repair or not to repair: with FAVOR® there is no question

Anthony Garetto, Kristian Schulz, Gilles Tabbone, Michael Himmelhaus, Thomas Scheruebl

Proceedings Volume 9985, 99851Q (2016) https://doi.org/10.1117/12.2243620

KEYWORDS: Manufacturing, Reliability, Tolerancing, Image processing, Image enhancement, Error analysis, Inspection, Image analysis, Back end of line, Neodymium

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In the mask shop the challenges associated with today’s advanced technology nodes, both technical and economic, are becoming increasingly difficult. The constant drive to continue shrinking features means more masks per device, smaller manufacturing tolerances and more complexity along the manufacturing line with respect to the number of manufacturing steps required. Furthermore, the extremely competitive nature of the industry makes it critical for mask shops to optimize asset utilization and processes in order to maximize their competitive advantage and, in the end, profitability. Full maximization of profitability in such a complex and technologically sophisticated environment simply cannot be achieved without the use of smart automation. Smart automation allows productivity to be maximized through better asset utilization and process optimization. Reliability is improved through the minimization of manual interactions leading to fewer human error contributions and a more efficient manufacturing line. In addition to these improvements in productivity and reliability, extra value can be added through the collection and cross-verification of data from multiple sources which provides more information about our products and processes. When it comes to handling mask defects, for instance, the process consists largely of time consuming manual interactions that are error prone and often require quick decisions from operators and engineers who are under pressure. The handling of defects itself is a multiple step process consisting of several iterations of inspection, disposition, repair, review and cleaning steps. Smaller manufacturing tolerances and features with higher complexity contribute to a higher number of defects which must be handled as well as a higher level of complexity. In this paper the recent efforts undertaken by ZEISS to provide solutions which address these challenges, particularly those associated with defectivity, will be presented. From automation of aerial image analysis to the use of data driven decision making to predict and propose the optimized back end of line process flow, productivity and reliability improvements are targeted by smart automation. Additionally the generation of the ideal aerial image from the design and several repair enhancement features offer additional capabilities to improve the efficiency and yield associated with defect handling.

Proceedings Article | 5 October 2016 Paper

Registration performance on EUV masks using high-resolution registration metrology

Steffen Steinert, Hans-Michael Solowan, Jinback Park, Hakseung Han, Dirk Beyer, Thomas Scherübl

Proceedings Volume 9985, 99851W (2016) https://doi.org/10.1117/12.2241498

KEYWORDS: Extreme ultraviolet, Photomasks, Metrology, Image registration, Overlay metrology, Deep ultraviolet, Reticles, Databases, Calibration, Lithography

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SPIE Journal Paper | 27 October 2014

Defect mitigation considerations for EUV photomasks

Anthony Garetto, Renzo Capelli, Frederik Blumrich, Krister Magnusson, Markus Waiblinger, Thomas Scherübl, Jan Hendrik Peters, Michael Goldstein

JM3, Vol. 13, Issue 04, 043006, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.043006

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Scanners, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Deep ultraviolet, Atomic force microscopy, Manufacturing

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Proceedings Article | 17 October 2014 Paper

Scanner arc illumination and impact on EUV photomasks and scanner imaging

Renzo Capelli, Anthony Garetto, Krister Magnusson, Thomas Scherübl

Proceedings Volume 9231, 923109 (2014) https://doi.org/10.1117/12.2067578

KEYWORDS: Photomasks, Extreme ultraviolet, Scanners, Extreme ultraviolet lithography, Semiconducting wafers, Reflectivity, Critical dimension metrology, Lithography, Lithographic illumination, Ions

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Proceedings Article | 17 October 2014 Paper

On the benefit of high resolution and low aberrations for in-die mask registration metrology

Dirk Beyer, Dirk Seidel, Sven Heisig, Steffen Steinert, Susanne Töpfer, Thomas Scherübl, Jochen Hetzler

Proceedings Volume 9235, 92351S (2014) https://doi.org/10.1117/12.2069925

KEYWORDS: Photomasks, Image registration, Metrology, Image analysis, Charge-coupled devices, Overlay metrology, Lithography, Optical lithography, Lithographic illumination, CCD image sensors

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Proceedings Article | 27 May 2010 Paper

Increased productivity of repair verification by offline analysis of aerial images

Ernesto Villa, Luca Sartelli, Hiroyuki Miyashita, Thomas Scheruebl, Rigo Richter, Thomas Thaler

Proceedings Volume 7748, 77481F (2010) https://doi.org/10.1117/12.863806

KEYWORDS: Photomasks, Image analysis, Manufacturing, Error analysis, Reliability, Image processing, Inspection, Semiconducting wafers, Standards development, Lithography

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Proceedings Article | 2 April 2010 Paper

Reducing the impact of reticle CD-non-uniformity of multiple structures by dose corrections based on aerial image measurements

Ute Buttgereit, Robert Birkner, Thomas Scheruebl, Sander de Putter, Bernardo Kastrup, Jo Finders

Proceedings Volume 7638, 76380D (2010) https://doi.org/10.1117/12.848053

KEYWORDS: Semiconducting wafers, Reticles, Critical dimension metrology, Metrology, Scanners, Scanning electron microscopy, Photomasks, Data corrections, Data acquisition, Image analysis

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Proceedings Article | 11 December 2009 Paper

In-die actinic metrology on photomasks for low k1 lithography

Dirk Beyer, Ute Buttgereit, Thomas Scheruebl, Axel Zibold

Proceedings Volume 7520, 752016 (2009) https://doi.org/10.1117/12.839973

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Image registration, Scanners, Lithography, Phase measurement, Printing, Phase shifting

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Proceedings Article | 30 September 2009 Paper

In-die metrology on photomasks for low k1 lithography

Dirk Beyer, Ute Buttgereit, Thomas Scheruebl

Proceedings Volume 7488, 74881N (2009) https://doi.org/10.1117/12.834869

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Image registration, Phase measurement, Scanners, Lithography, Printing, Phase shifting

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Proceedings Article | 23 September 2009 Paper

AIMS mask qualification for 32nm node

Rigo Richter, Thomas Thaler, Holger Seitz, Ulrich Stroessner, Thomas Scheruebl

Proceedings Volume 7488, 74882R (2009) https://doi.org/10.1117/12.830083

KEYWORDS: Photomasks, Double patterning technology, Scanners, Source mask optimization, Lithography, Computational lithography, Lithographic illumination, Semiconducting wafers, 193nm lithography, Optical aberrations

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Proceedings Article | 23 September 2009 Paper

New analysis tools and processes for mask repair verification and defect disposition based on AIMS images

Rigo Richter, Eric Poortinga, Thomas Scheruebl

Proceedings Volume 7488, 74882V (2009) https://doi.org/10.1117/12.835948

KEYWORDS: Photomasks, Image analysis, Image processing, Semiconducting wafers, Error analysis, Manufacturing, Analytical research, Tolerancing, Critical dimension metrology, Standards development

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Proceedings Article | 11 May 2009 Paper

The imaging performance of flash memory masks characterized with AIMS

Eelco van Setten, Onno Wismans, Kees Grim, Jo Finders, Mircea Dusa, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 7379, 737912 (2009) https://doi.org/10.1117/12.824279

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Seaborgium, Scanners, Binary data, Lithography, Scanning electron microscopy, Cadmium, Error analysis

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Proceedings Article | 11 May 2009 Paper

Semi-automated repair verification of aerial images

Eric Poortinga, Thomas Schereubl, Rigo Richter

Proceedings Volume 7379, 73792D (2009) https://doi.org/10.1117/12.824327

KEYWORDS: Photomasks, Image analysis, Metrology, Semiconducting wafers, Manufacturing, Error analysis, Analytical research, Critical dimension metrology, Standards development, Lithography

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Proceedings Article | 24 March 2009 Paper

WLCD: a new system for wafer level CD metrology on photomasks

Sven Martin, Holger Seitz, Wolfgang Degel, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 7272, 72722T (2009) https://doi.org/10.1117/12.814728

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Lithography, Airborne remote sensing, Printing, 193nm lithography, Scanning electron microscopy, Optical proximity correction

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Proceedings Article | 13 March 2009 Paper

Application of pixel-based mask optimization technique for high transmission attenuated PSM

Kyohei Sakajiri, Alexander Trichkov, Yuri Granik, Eric Hendrickx, Geert Vandenberghe, Monica Kempsell, Germain Fenger, Klaus Boehm, Thomas Scheruebl

Proceedings Volume 7275, 72750X (2009) https://doi.org/10.1117/12.813753

KEYWORDS: Photomasks, SRAF, Semiconducting wafers, Printing, Lithography, Source mask optimization, Electroluminescence, Manufacturing, Optical lithography, Reticles

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Proceedings Article | 17 October 2008 Paper

AIMS and resist simulation

Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 7122, 71221D (2008) https://doi.org/10.1117/12.801226

KEYWORDS: Semiconducting wafers, Photomasks, Calibration, Image processing, Scanners, Printing, Photoresist processing, Lithography, Data modeling, Physics

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Proceedings Article | 17 October 2008 Paper

AIMS-45 image validation of contact hole patterns after inverse lithography at NA 1.35

E. Hendrickx, R. Birkner, M. Kempsell, A. Tritchkov, G. Vandenberghe, T. Scheruebl

Proceedings Volume 7122, 71221E (2008) https://doi.org/10.1117/12.801559

KEYWORDS: Atrial fibrillation, Lithography, Semiconducting wafers, Photomasks, Electroluminescence, Lithographic illumination, Reticles, Printing, Optical proximity correction, Scanners

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Proceedings Article | 19 May 2008 Paper

Wafer level CD metrology on photomasks using aerial imaging technology

Thomas Scherübl, Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter

Proceedings Volume 7028, 70282W (2008) https://doi.org/10.1117/12.793102

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Airborne remote sensing, Scanning electron microscopy, Line width roughness, Line edge roughness, Scanners, Optical proximity correction, Lithography

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Proceedings Article | 19 May 2008 Paper

Mask CD control (CDC) using AIMS as the CD metrology data source

Guy Ben-Zvi, Eitan Zait, Vladimir Dmitriev, Steven Labovitz, Erez Graitzer, Klaus Böhm, Robert Birkner, Thomas Scheruebl

Proceedings Volume 7028, 70281C (2008) https://doi.org/10.1117/12.793054

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Signal attenuation, Scanners, Airborne remote sensing, Calibration, Data corrections, Cadmium, Scatterometry

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Proceedings Article | 19 May 2008 Paper

Increasing the predictability of AIMS measurements by coupling to resist simulations

Balint Meliorisz, Andreas Erdmann, Thomas Schnattinger, Ulrich Ströβner, Thomas Scherübl, Peter De Bisschop, Vicky Philipsen

Proceedings Volume 7028, 70282S (2008) https://doi.org/10.1117/12.793098

KEYWORDS: Semiconducting wafers, Photoresist materials, Data modeling, Photomasks, Scanners, Diffusion, Lithography, Photoresist processing, Calibration, Photoresist developing

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Proceedings Article | 2 May 2008 Paper

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

Christian Ehrlich, Ute Buttgereit, Klaus Boehm, Thomas Scheruebl, Klaus Edinger, Tristan Bret

Proceedings Volume 6792, 67920H (2008) https://doi.org/10.1117/12.798599

KEYWORDS: Photomasks, Phase shifts, Imaging systems, Electron beams, Opacity, Sensors, Bridges, Inspection, Visualization, Quartz

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Proceedings Article | 2 May 2008 Paper

Characterizing the imaging performance of flash memory masks using AIMS

Eelco van Setten, Onno Wismans, Kees Grim, Jo Finders, Mircea Dusa, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6792, 67920K (2008) https://doi.org/10.1117/12.798603

KEYWORDS: Photomasks, Seaborgium, Binary data, Semiconducting wafers, Electroluminescence, Scanners, Scanning electron microscopy, Lithography, Critical dimension metrology, Optical proximity correction

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Proceedings Article | 11 April 2008 Paper

The flash memory battle: How low can we go?

Eelco van Setten, Onno Wismans, Kees Grim, Jo Finders, Mircea Dusa, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6924, 69244I (2008) https://doi.org/10.1117/12.773266

KEYWORDS: Photomasks, Binary data, Seaborgium, Semiconducting wafers, Critical dimension metrology, Scanners, Atrial fibrillation, Scanning electron microscopy, Electroluminescence, Reticles

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Proceedings Article | 31 October 2007 Paper

Mask CD control (CDC) with ultrafast laser for improving mask CDU using AIMS as the CD metrology data source

Guy Ben-Zvi, Eitan Zait, Vladimir Dmitriev, Erez Graitzer, Gidi Gottlieb, Lior Leibovich, Robert Birkner, Klaus Boehm, Thomas Scheruebl

Proceedings Volume 6730, 67304X (2007) https://doi.org/10.1117/12.771190

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Signal attenuation, Ultrafast lasers, Airborne remote sensing, Scanners, Data corrections, Control systems, Scanning electron microscopy

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Proceedings Article | 30 October 2007 Paper

Using the AIMS 45-193i for hyper-NA imaging applications

Peter De Bisschop, Vicky Philipsen, Robert Birkner, Ute Buttgereit, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301G (2007) https://doi.org/10.1117/12.746688

KEYWORDS: Scanners, Semiconducting wafers, Photomasks, Lithography, Inspection, Electroluminescence, Polarization, Binary data, Computer simulations, Reticles

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Proceedings Article | 30 October 2007 Paper

Impact of alternative mask stacks on the imaging performance at NA 1.20 and above

Vicky Philipsen, Kei Mesuda, Peter De Bisschop, Andreas Erdmann, Giuseppe Citarella, Peter Evanschitzky, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301N (2007) https://doi.org/10.1117/12.746678

KEYWORDS: Photomasks, Chromium, Electroluminescence, Semiconducting wafers, Nanoimprint lithography, Tantalum, Lithography, Scanners, Scanning electron microscopy, Resolution enhancement technologies

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Proceedings Article | 30 October 2007 Paper

Integrated photomask defect printability check, mask repair, and repair validation procedure for phase-shifting masks for the 45-nm node and beyond

Christian Ehrlich, Ute Buttgereit, Klaus Boehm, Thomas Scheruebl, Klaus Edinger, Tristan Bret

Proceedings Volume 6730, 67301Z (2007) https://doi.org/10.1117/12.746666

KEYWORDS: Photomasks, Phase shifts, Electron beams, Imaging systems, Sensors, Phase measurement, Inspection, Opacity, Metrology

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Proceedings Article | 12 May 2007 Paper

Novel solution for in-die phase control under scanner equivalent optical settings for 45-nm node and below

Sascha Perlitz, Ute Buttgereit, Thomas Scherübl, Dirk Seidel, Kyung M. Lee, Malahat Tavassoli

Proceedings Volume 6607, 66070Z (2007) https://doi.org/10.1117/12.728948

KEYWORDS: Scanners, Photomasks, Phase measurement, Etching, Polarization, Diffraction, Phase shifts, Phase shifting, Metrology, Semiconducting wafers

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As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. Both attenuated and alternating Phase Shifting Masks (PSM) need precise control of phase as a function of both pitch and target sizes. However conventional interferometer-based phase shift measurements are limited to large CD targets and require custom designed patterns in order to function properly, which limits phase measurement Zeiss is currently developing an optical phase measurement tool (Phame^TM), providing the capability of extending process control from large CD test features to in-die phase shifting features with high spatial resolution. The necessity of designing this optical metrology tool according to the optical setup of a lithographic exposure tool (scanner) has been researched to be fundamental for the acquisition of phase information generated from features close to the size of the used wavelength. It was found by simulation that the image phase of a scanner depends on polarization and the angle of incidence of the illumination light due to rigorous effects. Additionally, for small features the phase value is strongly influenced by the imaging NA of the scanner due to the loss of phase information in the imaging pupil. Simulations show that the resulting scanner phase in the image plane only coincides with the etch-depth equivalent phase for large test features, exceeding the size of the in-die feature by an order of magnitude. In this paper we introduce the Phame^TM phase metrology tool, which enables the industry to perform in-die phase control for Alternating PSM, Attenuated PSM and CPL masks. The Phame^TM uses a 193nm light source with the optical capability of phase measurement at scanner NA up to the equivalent of a NA1.6 immersion scanner, under varying, scanner relevant angle of incidence for Attenuated PSMs and CPLs, and with the possibility of polarizing the illuminating light. New options for phase shifting mask process control on in-die features will be outlined with first phase measurement results for varying states of polarization.

Proceedings Article | 3 May 2007 Paper

Investigation of hyper-NA scanner emulation for photomask CDU performance

Eric Poortinga, Thomas Scheruebl, Will Conley, Frank Sundermann

Proceedings Volume 6533, 653307 (2007) https://doi.org/10.1117/12.736325

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Metrology, Lithography, Data acquisition, Manufacturing, Photoresist processing, Image acquisition

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As the semiconductor industry moves toward immersion lithography using numerical apertures above 1.0 the quality of the photomask becomes even more crucial. Photomask specifications are driven by the critical dimension (CD) metrology within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately, tolerances of device electrical properties drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process, and photomask quality. Tightening of photomask specifications is one mechanism for meeting the wafer CD targets. The challenge lies in determining how photomask level metrology results influence wafer level imaging performance. Can it be inferred that photomask level CD performance is the direct contributor to wafer level CD performance? With respect to phase shift masks, criteria such as phase and transmission control are generally tightened with each technology node. Are there other photomask relevant influences that effect wafer CD performance? A comprehensive study is presented supporting the use of scanner emulation based photomask CD metrology to predict wafer level within chip CD uniformity (CDU). Using scanner emulation with the photomask can provide more accurate wafer level prediction because it inherently includes all contributors to image formation related to the 3D topography such as the physical CD, phase, transmission, sidewall angle, surface roughness, and other material properties. Emulated images from different photomask types were captured to provide CD values across chip. Emulated scanner image measurements were completed using an AIMS^TM45-193i with its hyper-NA, through-pellicle data acquisition capability including the Global CDU Map^TM software option for AIMS^TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CDU data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using scanner emulation based photomask CD metrology.

Proceedings Article | 3 May 2007 Paper

Programmed defects study on masks for 45nm immersion lithography using the novel AIMS 45-193i

Thomas Scherübl, Arndt Dürr, Klaus Böhm, Robert Birkner, Rigo Richter, Ulrich Strößner

Proceedings Volume 6533, 653309 (2007) https://doi.org/10.1117/12.736530

KEYWORDS: Photomasks, Scanners, Immersion lithography, Lithographic illumination, Opacity, Defect detection, Lithography, CCD cameras, Semiconducting wafers, Manufacturing

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Proceedings Article | 5 April 2007 Paper

Study of rigorous effects and polarization on phase shifting masks through simulations and in-die phase measurements

Kyung Lee, Malahat Tavassoli, Max Lau, Kiho Baik, Barry Lieberman, Sascha Perlitz, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 6518, 65181Y (2007) https://doi.org/10.1117/12.712908

KEYWORDS: Photomasks, Phase measurement, Scanners, Etching, Semiconducting wafers, Polarization, Phase shifts, Metrology, Near field, Imaging systems

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Proceedings Article | 5 April 2007 Paper

Phame: a novel phase metrology tool of Carl Zeiss for in-die phase measurements under scanner relevant optical settings

Sascha Perlitz, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 6518, 65184R (2007) https://doi.org/10.1117/12.712813

KEYWORDS: Scanners, Photomasks, Phase measurement, Metrology, Etching, Semiconducting wafers, Phase shifting, Process control, Optics manufacturing, Lithography

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Proceedings Article | 27 March 2007 Paper

Pupil plane analysis on AIMS 45-193i for advanced photomasks

Yasutaka Morikawa, Takanori Sutou, Kei Mesuda, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi, Ulrich Stroessner, Robert Birkner, Rigo Richter, Thomas Scheruebl

Proceedings Volume 6520, 65201H (2007) https://doi.org/10.1117/12.711664

KEYWORDS: Photomasks, Pellicles, Diffraction, Semiconducting wafers, Printing, Wafer-level optics, 3D metrology, Polarization, Data modeling, Binary data

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Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of mask materials and pellicle films has been required. In order to analyze the influence of mask material's optical characteristics, we have proposed to use the AIMS^TM system measuring diffraction intensity balance in previous work. That was enabled by acquiring pupil plane images using the Bertrand lens in the AIMS^TM system to measure selected area's diffracted light. In this study of mask material evaluation, we used same functionality of AIMS^TM system, MonoPole illumination and Bertrand lens, as previous work but other direction's pole is also used on the illumination aperture to cover total diffraction orders of Cross-quad illumination because this illumination is more flexible for x and y patterns. In order to get diffracted light of 45nm half-pitch, hyper-NA e.g. NA=1.35 was applied and the AIMS^TM 45-193i Alpha system was used for this evaluation. The examinations were performed with binary and half tone PSM with half pitch 40 to 150nm on a 1x scale and fixed half pitch 45nm with various mask bias. We confirmed the relation between diffractions' intensity balance and wafer printing performance for each material and we compared them to 3D simulation results. Moreover, by using the same functionality of AIMS^TM system, the transmission change by pellicle film was also examined. We have prepared two different thickness pellicles to compare transmission change and printed CD on the wafer. Intensity profile at pupil plane on the clear region of the mask was acquired with Bertrand lens and conventional large sigma setting for both with and without pellicle film on the mask. By comparing transmission distribution change between with and without pellicle, we could calculate transmission loss by pellicle at large incident angles. For this experiment, NA=1.40 was applied and the AIMS^TM 45-193i Alpha system was also used. The examinations were performed with half tone PSM at half pitch 45nm and 65nm on a 1x scale on linear polarized DiPole illumination. As a result, we have confirmed good agreement between AIMS^TM measurement data and optical 3D simulations. In conclusion, the AIMS^TMsystem is a valuable tool for analyzing diffraction efficiency or intensity distribution on the pupil plane and comparison to wafer printing performance.

Proceedings Article | 20 October 2006 Paper

Process window enhancement for 45-nm node using alterable transmission phase-shifting materials

Hans Becker, Markus Renno, Guenter Hess, Ute Buttgereit, Corinna Koepernik, Lorenz Nedelmann, Mathias Irmscher, Robert Birkner, Axel Zibold, Thomas Scheruebl

Proceedings Volume 6349, 63490J (2006) https://doi.org/10.1117/12.686022

KEYWORDS: Photomasks, Phase shifts, Etching, Silica, Tantalum, Lithography, Optical lithography, Semiconducting wafers, Scanners, Phase shifting

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Proceedings Article | 21 June 2006 Paper

Printability study with polarization based AIMS fab 193i to investigate mask polarization effects

Axel Zibold, Ulrich Stroessner, Eric Poortinga, Rainer Schmid, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch

Proceedings Volume 6281, 628108 (2006) https://doi.org/10.1117/12.692728

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Transmittance, Phase shifts, Printing, Immersion lithography, Semiconductors

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Proceedings Article | 24 March 2006 Paper

Printability study with polarisation capable AIMS™ fab 193i to study polarisation effects

Axel Zibold, Ulrich Stroessner, Andrew Ridley, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch, Eric Poortinga, Rainer Schmid, Joost Bekaert, Vicky Philipsen, Lieve Van Look, Peter Leunissen

Proceedings Volume 6152, 61522F (2006) https://doi.org/10.1117/12.656235

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Printing, Critical dimension metrology, Transmittance, Binary data, Polarizers

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Proceedings Article | 28 June 2005 Paper

Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

Axel Zibold, E. Poortinga, H. v. Doornmalen, R. Schmid, T. Scherubl, W. Harnisch

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617508

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Polarization, Liquids, Reticles, Critical dimension metrology, Binary data, Imaging systems, Refractive index

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Proceedings Article | 16 June 2005 Paper

Results of a round robin measurement on a new CD mask standard

F. Gans, R. Liebe, J. Richter, Th. Schatz, B. Hauffe, F. Hillmann, S. Dobereiner, H.-J. Bruck, G. Scheuring, B. Brendel, L. Bettin, K.-D. Roth, W. Steinberg, G. Schluter, P. Speckbacher, W. Sedlmeier, T. Scherubl, W. Hassler-Grohne, C. Frase, S. Czerkas, K. Dirscherl, B. Bodermann, W. Mirande, H. Bosse

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637313

KEYWORDS: Calibration, Photomasks, Ultraviolet radiation, Scanning electron microscopy, Standards development, Critical dimension metrology, Deep ultraviolet, Chromium, Microscopy, Opacity

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Proceedings Article | 27 January 2005 Paper

Using the aerial image measurement technique to speed up mask development for 193-nm immersion and polarization lithography

Axel Zibold, Wolfgang Harnisch, Thomas Scheruebl, Norbert Rosenkranz, Joern Greif

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.576948

KEYWORDS: Photomasks, Polarization, Scanners, Semiconducting wafers, Reticles, Liquids, Manufacturing, Tolerancing, Neodymium, Lithography

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Proceedings Article | 20 August 2004 Paper

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

Axel Zibold, Rainer Schmid, B. Stegemann, Thomas Scheruebl, Wolfgang Harnisch, Yuji Kobiyama

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557811

KEYWORDS: Photomasks, Semiconducting wafers, Pellicles, Reticles, Inspection, Lithography, Scanners, Particles, Crystals, Polarization

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Proceedings Article | 2 June 2004 Paper

Aerial image measurement technique for today's and future 193-nm lithography mask requirements

Axel Zibold, Thomas Scheruebl, Alexander Menck, Robert Brunner, J. Greif

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568016

KEYWORDS: Photomasks, Lithography, Image resolution, Objectives, 193nm lithography, Lithographic illumination, Beam homogenizers, Polarization, Reticles, Semiconducting wafers

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Proceedings Article | 24 May 2004 Paper

Aerial image measurement technique for fast evaluation of 193-nm lithography masks

Axel Zibold, Thomas Scheruebl, Wolfgang Harnisch, Robert Brunner, J. Greif

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533021

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Scanners, Reticles, Polarization, Phase shifts, Beam homogenizers, Lithographic illumination, Homogenization

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Proceedings Article | 17 December 2003 Paper

EUV mask simulation for AIMS

Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, Axel Zibold

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518053

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Imaging systems, Lithographic illumination, Reticles, EUV optics, Wafer-level optics

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Showing 5 of 45 publications

Conference Committee Involvement (22)

Photomask Technology 2024

30 September 2024 | Monterey, California, United States

Photomask Technology 2023

2 October 2023 | Monterey, California, United States

Photomask Technology 2022

26 September 2022 | Monterey, California, United States

Photomask Technology

27 September 2021 | Online Only, United States

Photomask Technology

21 September 2020 | Online Only, California, United States

Photomask Technology

16 September 2019 | Monterey, California, United States

Photomask Technology

17 September 2018 | Monterey, California, United States

Photomask Technology

11 September 2017 | Monterey, California, United States

Modeling Aspects in Optical Metrology

26 June 2017 | Munich, Germany

Photomask Technology

12 September 2016 | San Jose, California, United States

Photomask Technology 2015

29 September 2015 | Monterey, California, United States

Modeling Aspects in Optical Metrology V

23 June 2015 | Munich, Germany

Photomask Technology 2014

16 September 2014 | Monterey, California, United States

SPIE Photomask Technology

10 September 2013 | Monterey, California, United States

Modeling Aspects in Optical Metrology IV

13 May 2013 | Munich, Germany

Photomask Technology

11 September 2012 | Monterey, California, United States

Photomask Technology

19 September 2011 | Monterey, California, United States

Modeling Aspects in Optical Metrology

23 May 2011 | Munich, Germany

Photomask Technology

13 September 2010 | Monterey, California, United States

Photomask Technology

15 September 2009 | Monterey, California, United States

Modeling Aspects in Optical Metrology

15 June 2009 | Munich, Germany

Modeling Aspects in Optical Metrology

18 June 2007 | Munich, Germany

Showing 5 of 22 Conference Committees

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